Source Language （ 源 语 ）

Target Language （译 入 语 ）

切断的目的：沿着垂直于晶体生长的方向，切除硅棒的头（硅单晶的籽晶和放肩部分），尾部以及外形尺寸小于规格要求的无用部分，将硅晶棒切成数段，同时，对硅棒切取样片，检测其电阻率，氧碳含量，晶体缺陷等相关质量参数。

Perpendicular to the crystal growth direction, chopping off the head ( including the seed crystal and the shouldering portion ),tail and the useless part which contour dimension are less or surpass the given size, cropping the silicon single crystal ingot into several pieces, cutting off the dummy wafer to test its resistivity, oxygen and carbon content, crystal defect and other related quality parameters.

外圆滚磨

无论是采用直拉法或是区熔法生长的硅单晶棒，一般是按＜100 ＞或＜111 ＞晶向生长的。通过滚磨加工，使其表面整形达到基本的直径和直径公差要求，并确定其定位面的位置及其基本尺寸

Excircle barreling

The silicon single crystal ingot whether made by the Czochralski or zone refining method, on average, grows along the crystallographic direction of ＜100 ＞or ＜111 ＞.The excircle barreling process can fine-tune its surface to meet the requirement of the established diameter and its diameter tolerance, in addition, to confirm the right location of the primary flat and its basic size.

表面腐蚀

为了去除磨削加工过程中的表面机械损伤和沾污，有利于后道工序的加工，就要对其表面进行化学腐蚀处理。

Surface etching

In order to remove the mechanical damage caused by the grinding process and the surface contamination, and facilitate the next working process, surface etching is an absolutely necessary step.

硅切片

把单晶棒切成一定厚度的薄晶片，以便对其主要参数进行检测。

Slicing

Cutting the ingot into slices of given thickness, so we can check its major parameters. 

硅片倒角

其目的是消除硅片边缘表面由于切割而产生的棱角，毛刺，崩边，裂缝或其他缺陷和各种边缘污染，倒角后，可以降低硅片边缘表面的粗糙度，增加硅片边缘表面的机械强度，减少表面沾污。

Edge Grinding

The sharp edge, bur, and broken edge, crevice as well as other defects and all sorts of border contamination will appear following the cutting procedure, all these negative impact can be watered down greatly during edge grinding process. On the other hand, this process can reduce the edge roughness grade to be more smoothly,  increase its mechanical strength of the border area and also lower down its suffice contamination.

双面研磨和表面磨削

为了去除上道工序的表面机械应力损伤层和杂质污染，并使硅片具有一定的几何尺寸精度的平坦表面。

Double side lapping and grinding

To eliminate the damage layer resulted from suffice mechanical stress left by the previous procedure and the impurity contaminations, double side lapping and grinding is an inevitable leg. By doing so, it can ensure the wafer a flat and smooth surface with certain geometric dimensioning precision.

硅片的化学腐蚀

化学腐蚀可以消除机械应力损伤层和杂质污染. 对于大直径硅单晶片，一般都采用酸腐蚀工艺。

Chemical corrosion of the wafer

Chemical corrosion can wipe off the damage layers including the grinding mark and impurity stains。 As to the large diameter silicon single crystal wafer, generally, choose acid to achieve this goal.