ACST GmbH
Varactor Diodes
ACST Varactor Diodes exhibit nearly ideal I-V behavior, i.e. very
little reverse current and abrupt breakdown at a voltage close to
the theoretical limit for particular doping concentration. This
allows for accurate module design and optimal power-handling
capability. Several varactor diodes have recently been developed.
Please contact us for further information
concerning diode specifications and availability.
Available diode configurations:
Structure
type |
Nominal
parameters |
Short structure
description |
Junction
capacitance
Cj0 (fF/anode) |
Total
capacitance
Ctot (fF) |
Series
resistance Rs/
differential
resistance Rdiff (Ω) |
Breakdown
voltage
Ubd (V) |
|
5VA40-10 |
40 |
14 |
13 |
30 |
Three
varactors in series on 30 µm thick
GaAs-substrate. |
|
5VA50-10 |
50 |
19 |
11 |
30 |
|
5VA60-10 |
60 |
22 |
10 |
30 |
|
5VA80-10 |
80 |
29 |
8.5 |
30 |
|
5VA25-13 |
25 |
11 |
19 |
40 |
|
5VA30-13 |
30 |
12 |
17 |
40 |
|
5VA35-13 |
35 |
14 |
15 |
40 |
|
5VA40-13 |
40 |
16 |
13 |
40 |
|
5VA50-13 |
50 |
19 |
11 |
40 |
|
5VA60-13 |
60 |
22 |
9.5 |
40 |
|
5VA70-13 |
70 |
25 |
8 |
40 |
|
5VA60-18 |
60 |
22 |
10.5 |
55 |
Diode parameters are usually determined for each batch individually
and may vary within up to 20% from nominal values.
Please ask on availability before ordering.
For large ordering quantities customer specifications can be
considered.
Low-Barrier Diodes
Please contact us for further information
concerning diode specifications and availability.
Available diode configurations:
Structure
type |
Nominal
parameters |
Short structure
description |
Junction
capacitance
Cj0 (fF/anode) |
Total
capacitance
Ctot (fF) |
Series
resistance Rs/
differential
resistance Rdiff (Ω) |
Breakdown
voltage
Ubd (V) |
|
2DSF2.5 |
2.5 |
5 |
/ 4000 |
2.5 |
Low-barrier varistor on 5 µm thick transferred membrane-substrate
for zero-bias operation. |
|
2DSF8.0 |
8.0 |
11.5 |
/ 1500 |
2.0 |
|
SDSF5 |
5 |
8 |
/ 1500 |
2.0 |
|
SDSF10 |
10 |
13 |
/ 750 |
1.6 |
|
SDSF20 |
20 |
23 |
/ 375 |
1.3 |
|
SDSF30 |
30 |
33 |
/ 250 |
1.0 |
Diode parameters are usually determined for each batch individually
and may vary within up to 20% from nominal values.
Please ask on availability before ordering.
For large ordering quantities customer specifications can be
considered.
Varistor Diodes
Please contact us for further information
concerning diode specifications and availability.
Available diode configurations:
Structure
type |
Nominal
parameters |
Short structure
description |
Junction
capacitance
Cj0 (fF/anode) |
Total
capacitance
Ctot (fF) |
Series
resistance Rs/
differential
resistance Rdiff (Ω) |
Breakdown
voltage
Ubd (V) |
|
2MAF1.0 |
1.0 |
5.5 |
25 |
- |
Two varistors in anti-parallel configuration on 5 µm thick
transferred membrane-substrate for ultimate MM/Sub-MM wave
performance. |
|
2MAF1.5 |
1.5 |
6.5 |
18 |
- |
|
2MAF2.3 |
2.3 |
8.5 |
13 |
- |
|
2MAF3.2 |
3.2 |
11 |
11 |
- |
|
2MAM1.5 |
1.5 |
8 |
18 |
- |
Two varistors in anti-parallel configuration on 4 µm thick
AlGaAs-substrate. |
|
3MAM3.2 |
3.2 |
11.4 |
13 |
- |
|
3MAM4.6 |
4.6 |
14.2 |
11 |
- |
|
3MAS1.5 |
1.5 |
8 |
18 |
- |
Two varistors in anti-parallel configuration on 10 µm thick
GaAs-substrate. |
|
3MAS3.2 |
3.2 |
12.4 |
13 |
- |
|
3MAS4.6 |
4.6 |
15.2 |
11 |
- |
|
3MAS8.1 |
8.1 |
21.2 |
9 |
- |
|
3MSM1.5 |
1.5 |
5.5 |
18 |
4.0 |
Single varistor on 4 µm thick AlGaAs-substrate. |
|
3MSM3.2 |
3.2 |
7.2 |
13 |
4.0 |
|
3MSM4.6 |
4.6 |
8.6 |
10 |
4.0 |
|
3MSS3.2 |
3.2 |
8.2 |
13 |
4.0 |
|
3MSS4.6 |
4.6 |
9.6 |
10 |
4.0 |
|
3MSS8.1 |
8.1 |
13.1 |
9 |
4.0 |
Diode parameters are usually determined for each batch individually
and may vary within up to 20% from nominal values.
Please ask on availability before ordering.
For large ordering quantities customer specifications can be
considered.
联系：伽太科技 ，sales @ gamtic.com，手机：185 021 93480
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加载中…
(2014-08-19 22:19:08) 
