In physics, electron mobility (or simply, mobility), is a quantity relating the drift velocity 漂移速度of electrons to the applied electric field across a material, according to the formula:

http://upload.wikimedia.org/math/5/6/5/5659814e26b71883d5cdfcf078f0ce3d.pngMobility:常见半导体-金属载流子迁移率" />where

http://upload.wikimedia.org/math/a/9/1/a91ac7c694fe5e918397947c5b7d8dab.pngMobility:常见半导体-金属载流子迁移率" /> is the drift velocity in m/s (SI units) or cm/s (cgs units).

http://upload.wikimedia.org/math/f/b/1/fb1f9fd7044a1571c1fc593582d0a834.pngMobility:常见半导体-金属载流子迁移率" /> is the applied electric field in V/m (SI) or statvolt/cm (cgs).

http://upload.wikimedia.org/math/7/7/3/77316bd1d5862dd8a074a4378a5b4b45.pngMobility:常见半导体-金属载流子迁移率" /> is the mobility in m²/(V·s), in SI units, or cm²/(statvolt·s), in cgs units. A mixed mobility unit of 1 cm²/(V·s) = 0.0001 m²/(V·s) is also often used.

It is the application for electrons of the more general phenomenon of electrical mobility of charged particles in a fluid under an applied electric field.

半导体中，空穴也有迁移率，但是空穴迁移率比电子小很多

Gallium Nitride:   1000  cm*cm/V.s

Indium Nitride:     3200 cm*cm/V.s

Aluminum Nitride:   135 cm*cm/V.s